Multilayered thin-film structures containing multiple ternary and quaternary compounds (also known as heterostructure) are required for most semiconductor devices. Ideally, the entire thin-film structure should be grown on a substrate with the same lattice constant (referred to as lattice-matched substrate).

The binary compounds (such as GaAs, GaSb, InP, GaP, InAs, and InSb) with a few discrete lattice constants are commercially available. For fabrication of bulk crystals of binary compounds such as GaAs and InP, many procedures such as Bridgman crystal growth, vertical Gradient freezing (VGF), and Liquid encapsulation Czochralski (LEC) are used.

Because of its desirable physical features, such as high thermal conductivity and physico-chemical stability compared to other 2D materials and mechanical strength, hexagonal boron nitride (h-BN), whose crystal structure is comparable to that of graphene, has attracted a lot of attention. Because of its high band gap (5.7 eV), it also has insulating properties. As a result, h- BN is utilized in a passivation laye(oxidation-resistant coating), thermal management systems, an electron-tunnelling layer, and a proton-exchange membrane.

PBN is very resistant to thermal shocks and temperature gradients because to its exceptionally low Young's modulus and low linear expansion coefficient. PNB barriers do not crack in practice and can only be destroyed by arc or surface disintegration bum-through. Moreover, because of the low dielectric permittivity of PNB, the barriers manufactured of this material have the greatest thickness. As a result, there is a low risk of leaking in the metal-to-dielectric seal.

Pyrolytic Boron Nitride (PBN) is a high-temperature anisotropic ceramic with a unique mix of high thermal conductivity parallel to the crystal planes and electrical resistance. The directional thermal conductivity of PBN allows for superior 'heat spreading' for better temperature consistency. It is resistant to thermal stress due to its high strength, superior thermal conductivity, and low coefficient of thermal expansion introducing PBN as a potential structure for being used as electric insulators.